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Advance Technical Information
TrenchT2 TM GigaMOS TM
Power MOSFET
(Electrically Isolated Tab)
IXTZ550N055T2
V DSS =
I D25 =
R DS(on) ≤
55V
550A
1.0m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
DE475
D
D
D
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Continuous
Transient
55
55
± 20
± 30
V
V
V
V
G
S
S
Isolated Tab
I D25
I DM
I A
E AS
P D
T C = 25 ° C
T C = 25 ° C, Pulse Width Limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
550
1650
200
3
600
A
A
A
J
W
G = Gate
S = Source
Features
D = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
V ISOL
T L
T SOLD
V ISOL
F C
Weight
50/60 Hz, RMS t = 1 minute
I ISOL ≤ 1mA t = 1 second
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
2500
3000
300
260
2500
20..120 / 4.5..27
3
V~
V~
° C
° C
V~
N/lb.
g
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500 V~)
175°C Operating Temperature
Very High Current Handling
Capability
Fast Intrinsic Diode
Avalanche Rated
Very Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55
V
Easy to Mount
Space Savings
High Power Density
V GS(th)
V DS = V GS , I D = 250 μ A
2.0
4.0
V
Applications
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
± 200 nA
10 μ A
1.5 mA
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
R DS(on)
V GS = 10V, I D = 100A, Note 1
1.0 m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS100243(02/10)
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